unisonic technologies co., ltd 6N40K-TA preliminary power mosfet www.unisonic.com.tw 1 of 6 copyright ? 2015 unisonic technologies co., ltd qw-r205-052.a 6 a , 400v n-channel power mosfet ? description the utc 6N40K-TA is an n-channel enhancement mode power mosfet using utc?s perfect planar stripe, dmos technology to provide customers with superior switching performance and minimum on-state resistance. it also can withstand high energy pulse in the avalanche and commutation mode. the utc 6N40K-TA is generally used in applications , such as electronic lamp ballasts based on half bridge topology and high efficiency switched mode power supplies. ? features * r ds(on) <0.6 ? @ v gs =10v, i d =3a * fast switching speed * improved dv/dt capability ? symbol ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 6n40kl-ta3-t 6n40kg-ta3-t to-220 g d s tube 6n40kl-tf1-t 6n40kg-tf1-t to-220f1 g d s tube note: pin assignment: g: gate d: drain s: source (1) t: tube (2) ta3: to-220, tf1: to-220f1 (3) l: lead free, g: halogen free and lead free 6n40kl-ta3-t (1)packing type (2)package type (3)green package ? marking
6N40K-TA preliminary power mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r205-052.a ? absolute maximum ratings (t c = 25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 400 v gate-source voltage v gss 30 v avalanche current (note 2) i ar 6 a drain current continuous i d 6 (note 5) a pulsed (note 2) i dm 24(note 5) a avalanche energy single pulsed (note 3) e as 240 mj repetitive (note 2) e ar 8.5 mj peak diode recovery dv/dt (note 4) dv/dt 4.5 v/ns power dissipation to-220 p d 73 w to-220f1 38 junction temperature t j +150 c storage temperature t stg -55 ~ +150 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitive rating : pulse width limit ed by maximum junction temperature 3. l=13.5mh, i as =6a, v dd = 50v, r g =25 ? , starting t j =25c 4. i sd 6a, di/dt 200a/ s, v dd bv dss , starting t j =25c 5. drain current limited by maximum junction temperature ? thermal data parameter symbol ratings unit junction to ambient to-220/to-220f1 ja 62.5 c/w junction to case to-220 jc 1.71 c/w to-220f1 3.31
6N40K-TA preliminary power mosfet unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r205-052.a ? electrical characteristics (t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =250a 400 v breakdown voltage temperature coefficient ? bv dss / ? t j i d =250 a, referenced to 25c 0.54 v/c drain-source leakage current i dss v ds =400v, v gs =0v 1 a v ds =320v, t j =125c 10 a gate-source leakage current forward i gss v ds =0v ,v gs =+30v +100 na reverse v ds =0v ,v gs =-30v -100 na on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d =250a 2.0 4.0 v drain-source on-state resistance r ds ( on ) v gs =10v, i d =3a 0.6 ? dynamic parameters input capacitance c iss v ds =25v,v gs =0v,f=1.0mhz 490 pf output capacitance c oss 95 pf reverse transfer capacitance c rss 8.4 pf switching parameters total gate charge q g v ds =50v, v gs =10v, i d =1.3a (note 1,2) 65 nc gate-source charge q gs 6.2 nc gate-drain charge q gd 8.8 nc turn-on delay time t d ( on ) v dd =30v, i d =0.5a, r g =25 ? v gs =10v (note 1,2) 60 ns turn-on rise time t r 65 ns turn-off delay time t d ( off ) 105 ns turn-off fall time t f 44 ns source- drain diode ratings and characteristics maximum body-diode continuous current i s 6 a maximum body-diode pulsed current i sm 24 a drain-source diode forward voltage v sd i s =6a, v gs =0v 1.4 v body diode reverse recovery time t r r v gs =0v, i s =6a, v r =50v di f /dt=100a/ s (note 1) 300 ns body diode reverse recovery charge q rr 1.75 c notes: 1. pulse test : pulse width 300 s, duty cycle 2% 2. essentially independent of operating temperature
6N40K-TA preliminary power mosfet unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r205-052.a ? test circuits and waveforms same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * dv/dt controlled by r g * i sd controlled by pulse period * d.u.t.-device under test - + peak diode recovery dv/dt test circuit p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) v gs = p.w. period peak diode recovery dv/dt waveforms
6N40K-TA preliminary power mosfet unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r205-052.a ? test circuits and waveforms(cont.) v ds 90% 10% v gs t d(on) t r t d(off) t f switching test circuit switching waveforms 10v charge q gs q gd q g v gs gate charge test circuit gate charge waveform v dd t p time bv dss i as i d(t) v ds(t) unclamped inductive switching test circuit unclamped inductive switching waveforms
6N40K-TA preliminary power mosfet unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r205-052.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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